Massimo Rudan: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

Physics of Semiconductor Devices || Other Examples of the Schrödinger Equation

Year:

2018

Language:

english

File:

PDF, 434 KB

english, 2018

2

NOTE SULLA STRUMENTARIA DELL'ISTITUTO E MUSEO DI STORIA DELLA SCIENZA DI FIRENZE

MINIATI, MARA, RUDAN, MASSIMO

Journal:

Annali dell'Istituto e Museo di storia della scienza di Firenze

Year:

1982

File:

PDF, 4.99 MB

1982

3

Theoretical foundations of the quantum drift-diffusion and density-gradient models

Giorgio Baccarani, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Massimo Rudan

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 340 KB

english, 2008

4

Physics of Semiconductor Devices || Electrons and Holes in Semiconductors at Equilibrium

Year:

2018

Language:

english

File:

PDF, 976 KB

english, 2018

5

Physics of Semiconductor Devices || Measuring the Semiconductor Parameters

Year:

2018

Language:

english

File:

PDF, 380 KB

english, 2018

6

An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices

Reggiani, Susanna, Valdinoci, Marina, Colalongo, Luigi, Rudan, Massimo, Baccarani, Giorgio

Journal:

Year:

2000

Language:

english

File:

PDF, 2.73 MB

english, 2000

7

Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs

Elena Gnani, Alex Marchi, Susanna Reggiani, Massimo Rudan, Giorgio Baccarani

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 496 KB

english, 2006

8

Full-band transport properties of silicon dioxide using the spherical-harmonics expansion of the BTE

Elena Gnani, Susanna Reggiani, Massimo Rudan

Journal:

Physica B: Condensed Matter

Year:

2002

Language:

english

File:

PDF, 130 KB

english, 2002

9

Quantum algorithms in the frame of the coupled quantum-wires system

Susanna Reggiani, Andrea Bertoni, Massimo Rudan

Journal:

Physica B: Condensed Matter

Year:

2002

Language:

english

File:

PDF, 120 KB

english, 2002

10

Cross-talk simulation in CMOS micromachined gas-sensors with electrothermal actuation

Alberto Roncaglia, Luigi Colalongo, Dirk Lange, Massimo Rudan

Journal:

Sensors and Actuators B: Chemical

Year:

2000

Language:

english

File:

PDF, 503 KB

english, 2000

11

A Simulative Model for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches

Fabio Affinito, Rossella Brunetti, Carlo Jacoboni, Enrico Piccinini, Massimo Rudan, Albertino Bigiani, Paolo Carloni

Journal:

Journal of Computational Electronics

Year:

2005

Language:

english

File:

PDF, 607 KB

english, 2005

12

Numerical simulation of ballistic surface transport in cylindrical nanosystems

Alex Marchi, Susanna Reggiani, Massimo Rudan, Andrea Bertoni

Journal:

Journal of Computational Electronics

Year:

2006

Language:

english

File:

PDF, 309 KB

english, 2006

13

Two-Particle Eigenfunctions of Electrons Propagating in Two Parallel Quantum Wires

Alex Marchi, Susanna Reggiani, Andrea Bertoni, Massimo Rudan

Journal:

Journal of Computational Electronics

Year:

2003

Language:

english

File:

PDF, 155 KB

english, 2003

14

Investigation of non-local transport phenomena in small semiconductor devices

Antonio Gnudi, Farouk Odeh, Massimo Rudan

Journal:

Transactions on Emerging Telecommunications Technologies

Year:

1990

Language:

english

File:

PDF, 506 KB

english, 1990

15

Three-dimensional simulation of VLSI structures

Paolo Ciampolini, Anna Pierantoni, Massimo Rudan, Giorgio Baccarani

Journal:

Transactions on Emerging Telecommunications Technologies

Year:

1990

Language:

english

File:

PDF, 604 KB

english, 1990

16

calculated from a full band structure

Gnani, Elena, Reggiani, Susanna, Rudan, Massimo

Journal:

Physical Review B

Year:

2002

Language:

english

File:

PDF, 515 KB

english, 2002

17

Computational Analysis of Current and Noise Properties of a Single Open Ion Channel

Piccinini, Enrico, Affinito, Fabio, Brunetti, Rossella, Jacoboni, Carlo, Rudan, Massimo

Journal:

Journal of Chemical Theory and Computation

Year:

2007

Language:

english

File:

PDF, 223 KB

english, 2007

18

Monte Carlo simulation of charge transport in amorphous chalcogenides

Buscemi, Fabrizio, Piccinini, Enrico, Brunetti, Rossella, Rudan, Massimo, Jacoboni, Carlo

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 414 KB

english, 2009

19

Hot-carrier trap-limited transport in switching chalcogenides

Piccinini, Enrico, Cappelli, Andrea, Buscemi, Fabrizio, Brunetti, Rossella, Ielmini, Daniele, Rudan, Massimo, Jacoboni, Carlo

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 697 KB

english, 2012

20

[IEEE 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) - Hakone-Machi, Kanagawa (2008.09.9-2008.09.11)] 2008 International Conference on Simulation of Semiconductor Processes and Devices - Band calculation for the hexagonal and FCC chalcogenide Ge2Sb2Te5

Piccinini, Enrico, Tsafack, Thierry, Buscemiy, Fabrizio, Brunettiy, Rossella, Rudan, Massimo, Jacoboniy, Carlo

Year:

2008

Language:

english

File:

PDF, 826 KB

english, 2008

21

[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Investigation of Charge Transport in Amorphous Ge2Sb2Te5 Using the Variable-Range Hopping Model

Piccinini, Enrico, Buscemi, Fabrizio, Tsafack, Thierry, Rudan, Massimo, Brunetti, Rossella, Jacoboni, Carlo

Year:

2009

Language:

english

File:

PDF, 137 KB

english, 2009

22

[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs

Gnani, Elena, Gnudi, Antonio, Reggiani, Susanna, Rudan, Massimo, Baccarani, Giorgio

Year:

2007

Language:

english

File:

PDF, 2.99 MB

english, 2007

23

[IEEE ESSDERC 2007 - 37th European Solid State Device Research Conference - Muenchen, Germany (2007.09.11-2007.09.13)] ESSDERC 2007 - 37th European Solid State Device Research Conference - Phonon-scattering effects in CNT- FETs with different dimensions and dielectric materials

Grassi, Roberto, Poli, Stefano, Reggiani, Susanna, Gnudi, Antonio, Rudan, Massimo, Baccarani, Giorgio

Year:

2007

Language:

english

File:

PDF, 199 KB

english, 2007

24

Effects of High-$\kappa$ (HfO$_2$) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes

Gnani, Elena, Reggiani, Susanna, Rudan, Massimo, Baccarani, Giorgio

Journal:

IEEE Transactions on Nanotechnology

Year:

2007

Language:

english

File:

PDF, 1.40 MB

english, 2007

25

Hole density of states and group velocity in

Gnani, Elena, Reggiani, Susanna, Rudan, Massimo

Journal:

Physical Review B

Year:

2003

Language:

english

File:

PDF, 54 KB

english, 2003

26

Noise as a tool for tracing effects of nonclassical correlations in a degenerate nonequilibrium electron gas

Katilius, Ramūnas, Rudan, Massimo

Journal:

Physical Review B

Year:

2006

Language:

english

File:

PDF, 71 KB

english, 2006

27

Coherent electron transport in bent cylindrical surfaces

Marchi, Alex, Reggiani, Susanna, Rudan, Massimo, Bertoni, Andrea

Journal:

Physical Review B

Year:

2005

Language:

english

File:

PDF, 930 KB

english, 2005

28

Physics of Semiconductor Devices ||

Year:

2015

Language:

english

File:

PDF, 13.70 MB

english, 2015

29

Conductive preferential paths of hot carriers in amorphous phase-change materials

Cappelli, Andrea, Piccinini, Enrico, Xiong, Feng, Behnam, Ashkan, Brunetti, Rossella, Rudan, Massimo, Pop, Eric, Jacoboni, Carlo

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.18 MB

english, 2013

30

Electronic, optical and thermal properties of the hexagonal and rocksalt-like Ge2Sb2Te5 chalcogenide from first-principle calculations

Tsafack, Thierry, Piccinini, Enrico, Lee, Bong-Sub, Pop, Eric, Rudan, Massimo

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 1.49 MB

english, 2011

31

[IEEE 2008 1st IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems (NDCS 2008) - Cambridge, MA (2008.09.29-2008.09.30)] 2008 IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems - Effects of Channel Orientations, High-? Gate Stacks and Stress on UTB-FETs: A QDD Simulation Study

Silvestri, Luca, Reggiani, Susanna, Gnani, Elena, Gnudi, Antonio, Rudan, Massimo, Baccarani, Giorgio

Year:

2008

Language:

english

File:

PDF, 253 KB

english, 2008

32

[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Novel 3D random-network model for threshold switching of phase-change memories

Piccinini, Enrico, Cappelli, Andrea, Xiong, Feng, Behnam, Ashkan, Buscemi, Fabrizio, Brunetti, Rossella, Rudan, Massimo, Pop, Eric, Jacoboni, Carlo

Year:

2013

Language:

english

File:

PDF, 4.22 MB

english, 2013

33

Analysis of the SG discretizatioin scheme on a multi-dimensional domain — application to impact ionization

Journal:

Numerical Functional Analysis and Optimization

Year:

1995

File:

PDF, 3.97 MB

1995

34

3D simulation of quantum-wire confining potential for a GaAs/AlGaAs 2DEG heterostructure

Marchi, Alex, Bertoni, Andrea, Reggiani, Susanna, Rudan, Massimo

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 217 KB

english, 2004

35

DIFFUSION AND HIGH-FREQUENCY NOISE OF ELECTRONS IN AMORPHOUS SEMICONDUCTORS AT LOW ELECTRIC FIELDS

BUSCEMI, FABRIZIO, PICCININI, ENRICO, RUDAN, MASSIMO, BRUNETTI, ROSSELLA, JACOBONI, CARLO

Journal:

Fluctuation and Noise Letters

Year:

2012

Language:

english

File:

PDF, 215 KB

english, 2012

36

Time-dependent transport in amorphous semiconductors: Instability in the field-controlled regime

Buscemi, Fabrizio, Piccinini, Enrico, Brunetti, Rossella, Rudan, Massimo, Jacoboni, Carlo

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 735 KB

english, 2014

37

[AIP NOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009) - Pisa (Italy) (14–19 June 2009)] AIP Conference Proceedings - Correlation-Fluctuation Effects In Non-Equilibrium Quantum Gas

Katilius, R., Gantsevich, S. V., Kagan, V. D., Muradov, M. I., Ramonas, M., Rudan, M., Macucci, Massimo, Basso, Giovanni

Year:

2009

Language:

english

File:

PDF, 400 KB

english, 2009

38

Modelling surface-scattering effects in the solution of the Boltzmann transport equation based on the spherical-harmonics expansion

Greiner, Andreas, Vecchi, Maria Cristina, Rudan, Massimo

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 912 KB

english, 1998

39

NOTE SULLA STRUMENTARIA DELL'ISTITUTO E MUSEO DI STORIA DELLA SCIENZA DI FIRENZE

RUDAN, MASSIMO, MINIATI, MARA

Journal:

Annali dell'Istituto e Museo di storia della scienza di Firenze

Year:

1981

File:

PDF, 2.17 MB

1981

40

[IEEE 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Bologna, Italy (2015.1.26-2015.1.28)] EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - Ovonic materials for memory nano-devices: Stability of I(V) measurements

Rudan, Massimo, Piccinini, Enrico, Buscemi, Fabrizio, Brunetti, Rossella

Year:

2015

Language:

english

File:

PDF, 260 KB

english, 2015

41

ACCURATE CHARGE‐INTEGRALS EVALUATION IN TWO‐DIMENSIONAL FINITE‐ELEMENT SEMICONDUCTOR‐DEVICE SIMULATION

Journal:

COMPEL Int J for Computation and Maths in Electrical and Electronic Eng

Year:

1982

Language:

english

File:

PDF, 489 KB

english, 1982

42

[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Foreword

Baccarani, Giorgio, Rudan, Massimo

Year:

2010

Language:

english

File:

PDF, 55 KB

english, 2010

43

[IEEE IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society - Florence, Italy (2016.10.23-2016.10.26)] IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society - An improved MPPT algorithm based on hybrid RCC scheme for single-phase PV systems

Hammami, Manel, Grandi, Gabriele, Rudan, Massimo

Year:

2016

Language:

english

File:

PDF, 933 KB

english, 2016

44

Self-Heating Phase-Change Memory-Array Demonstrator for True Random Number Generation

Piccinini, Enrico, Brunetti, Rossella, Rudan, Massimo

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.59 MB

english, 2017

45

Electrical bistability in amorphous semiconductors: A basic analytical theory

Buscemi, Fabrizio, Piccinini, Enrico, Cappelli, Andrea, Brunetti, Rossella, Rudan, Massimo, Jacoboni, Carlo

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 662 KB

english, 2014

46

Time- and space-dependent electric response of Ovonic devices

Jacoboni, Carlo, Piccinini, Enrico, Brunetti, Rossella, Rudan, Massimo

Journal:

Journal of Physics D Applied Physics

Year:

2017

Language:

english

File:

PDF, 1.79 MB

english, 2017

47

Multivariate discovery and replication of five novel loci associated with Immunoglobulin G N-glycosylation

Shen, Xia, Klarić, Lucija, Sharapov, Sodbo, Mangino, Massimo, Ning, Zheng, Wu, Di, Trbojević-Akmačić, Irena, Pučić-Baković, Maja, Rudan, Igor, Polašek, Ozren, Hayward, Caroline, Spector, Timothy D., W

Journal:

Nature Communications

Year:

2017

Language:

english

File:

PDF, 1.46 MB

english, 2017

48

Physics of Semiconductor Devices || Elementary Cases

Year:

2018

Language:

english

File:

PDF, 340 KB

english, 2018

49

Physics of Semiconductor Devices || Thermal Oxidation—Layer Deposition

Year:

2018

Language:

english

File:

PDF, 466 KB

english, 2018

50

Physics of Semiconductor Devices || From Classical Mechanics to Quantum Mechanics

Year:

2018

Language:

english

File:

PDF, 606 KB

english, 2018